PART |
Description |
Maker |
STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(N沟道增强模式高密度功率MOS晶体管) N沟道增强模式“超高密度”功率MOS晶体管(不适用沟道增强模式高密度功率马鞍山晶体管) N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
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STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD 170 MHz in-system prommable high density PLD 125 MHz in-system prommable high density PLD 100 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
IDT82P2521BHGBLANK IDT82P2521BHBLANK IDT82P2521 |
21( 1) Channel E1 Short Haul LIU 21( 1) Channel High-Density E1 Line Interface Unit
|
Integrated Device Technology, Inc.
|
STD20N06 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR N-CHANNEL MOSFET
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SamHop Microelectronics Corp. STMicroelectronics ST Microelectronics
|
STP80N06-1 STP80N06-10 4888 |
From old datasheet system N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存??? High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??) High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五,10纳秒- 2微秒 HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp. Semtech Corporation
|
IDT82P2816 IDT82P2816BB IDT82P2816BBG |
16( 1) Channel High-Density T1/E1/J1 Line Interface Unit
|
Integrated Device Technology
|
IDT82P2808 IDT82P2808BB IDT82P2808BBG |
8( 1) Channel High-Density T1/E1/J1 Line Interface Unit
|
Integrated Device Technology
|
PM5366 PM5366-PI |
HIGH DENSITY 84/63 CHANNEL VT/TU MAPPER AND M13 MULTIPLEXER
|
PMC-Sierra Inc
|
ISPLSI2032VL-135LT44I ISPLSI2096VL ISPLSI2096VL-10 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD 2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8 ns, PQFP128 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44
|
LATTICE[Lattice Semiconductor] LATTICE [Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
WNM2025 WNM2025-3 WNM2025-3TR |
Single N-Channel, 20V, 3.9 A, Power MOSFET Supper high density cell design N-Channel MOSFET
|
TY Semiconductor Co., L...
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1032-60LG_883 1032-60LJ 1032-60LJI 1032-60LT 1032- |
High-Density Programmable Logic In-System Programmable High Density PLD
|
LATTICE[Lattice Semiconductor]
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